LQA60A300C qspeed ? family 300 v, 60 a q-series common-cathode diode www.powerint.com january 2011 product summary i f(avg) per diode 30 a v rrm 300 v q rr (typ at 125 c) 53 nc i rrm (typ at 125 c) 2.85 a softness t b /t a (typ at 125 c) 0.6 to-247 ad rohs compliant package uses lead-free plating and green mold compound.halogen free per iec 61249-2-21. general description this device has the lowest q rr of any 300v silicon diode. its reco very characteristics increase efficiency, reduce emi and eliminate snubbers. applications ? ac/dc and dc/dc output rectification ? output & freewheeling diodes ? motor drive circuits ? dc-ac inverters features ? low q rr , low i rrm , low t rr ? high di f /dt capable (1000a/s) ? soft recovery benefits ? increases efficiency ? eliminates need for snubber circuits ? reduces emi filter component size & count ? enables extremely fast switching absolute maximum ratings absolute maximum ratings are the values beyond which the device may be damaged or have its usef ul life impaired. functional ope ration under these conditions is not implied. symbol parameter conditions rating units v rrm peak repetitive reverse voltage 300 v i f(avg) average forward current per diode, t j = 150 c, t c = 99 c 30 a per device, t j = 150 c, t c = 99 c 60 a i fsm non-repetitive peak surge current per diode, 60 hz, ? cycle 200 a i fsm non-repetitive peak surge current per diode, ? cycle of t = 28 s sinusoid, t c = 25 c 350 a t j maximum junction temperature 150 c t stg storage temperature ?55 to 150 c lead soldering temperature leads at 1.6mm from case, 10 sec 300 c p d power dissipation t c = 25 c 113 w thermal resistance symbol resistance from: conditions rating units r ja junction to ambient per device 40 (typ) c/w per diode 1.1 c/w r jc junction to case per device 0.6 c/w pin assignment a1 k a2 k (backside heatsink) a1 k a2 k (backside heatsink) a1 k a2 a1 k a2
www.powerint.com rev 1.1 01/11 LQA60A300C 2 electrical specifications at t j = 25 c (unless otherwise specified) symbol parameter conditions min typ max units dc characteristics per diode i r reverse current per diode v r = 300 v, t j = 25 c - - 250 a v r = 300 v, t j = 125 c - 1.0 - ma v f forward voltage per diode i f = 30 a, t j = 25 c - 1.66 1.95 v i f = 30 a, t j = 150 c - 1.45 - v c j junction capacitance per diode v r = 10 v, 1 mhz - 89 - pf dynamic characteristics per diode t rr t j =25 c - 13.7 - ns reverse recovery time, per diode di f /dt =200 a/ s v r =200, i f =30 a t j =125 c - 28.5 - ns q rr t j =25 c - 13 19 nc reverse recovery charge, per diode di f /dt =200 a/ s v r =200, i f =30 a t j =125 c - 53 - nc i rrm t j =25 c - 1.5 2.2 a maximum reverse recovery current, per diode di f /dt =200 a/ s v r =200, i f =30 a t j =125 c - 2.85 - a s t j =25 c - 0.6 - softness per diode= a b t t di f /dt =200 a/ s v r =200, i f =30 a t j =125 c - 0.6 - note to component engineers : q-series diodes employ schottky technologies in their design and construction. therefore, component engineers should plan their test setups to be similar to traditional schottky test setups. (for further details, see application note an-300.) figure 1. reverse recovery definitions figure 2. reverse recovery test circuit pulse generator rg q1 vr + 15v d1 dut l1 i f di f /dt i rrm t rr t b t a 0 0.1xi rrm
rev 1.1 01/11 www.powerint.com LQA60A300C 3 electrical specifications at t j = 25 c (unless otherwise specified) 0 5 10 15 20 25 30 35 40 45 50 55 60 0.0 0.5 1.0 1.5 2.0 v f (v) i f (a) tj=125c tj=25c figure 3. typical i f vs v f 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v f (v) i f (a) tj=125c tj=25c figure 4. typical i f vs v f 0 50 100 150 200 250 300 350 0 20 40 60 80 100 120 140 160 180 v r (v) c j (pf) figure 5. typical c j vs v r 0 10 20 30 40 50 60 25 50 75 100 125 150 case temperature, t c ( o c) i f(av) (a) figure 6. dc current derating curve 0 20 40 60 80 100 120 0 2 4 6 8 101214161820222426283032 i f (a) q rr (nc) di f /dt=200a/us di f /dt=500a/us figure 7. typical q rr vs i f at t j =125 c 10 15 20 25 30 35 02468101214161820222426283032 i f (a) t rr (ns) di f /dt=200a/us di f /dt=500a/us figure 8. typical t rr vs i f at t j =125 c
www.powerint.com rev 1.1 01/11 LQA60A300C 4 0 20 40 60 80 100 120 25 50 75 100 125 150 case temperature, t c ( o c) p (w) figure 9. power derating curve 0 5 10 15 20 25 30 35 40 45 50 55 60 25 50 75 100 125 150 t c (c) i f (peak) (a) duty cycle=10% duty cycle=50% duty cycle=30% dc figure 10. if(peak) vs tc, f=70 khz LQA60A300C 0.001 0.01 0.1 1 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 t1(sec) zth(j-c)/rth(j-c ) d=0.002 d=0.005 d= 0.01 d= 0.02 d= 0.05 d= 0.1 d = 0.3 d= 0.5 single pulse figure 11. normalized maximum transient thermal impedance
rev 1.1 01/11 www.powerint.com LQA60A300C 5 dimensional outline drawings to-247 ad millimeters dim min max a 4.90 5.10 a1 2.31 2.51 a2 1.90 2.10 b 1.16 1.26 b2 1.96 2.06 b4 2.96 3.06 c 0.59 0.66 d 20.90 21.10 d1 16.25 16.85 d2 1.05 1.35 e 15.70 15.90 e1 13.10 13.50 e2 4.90 5.10 e3 2.40 2.60 e 5.44bsc l 19.80 21.10 l1 - 4.30 ?p 3.50 3.70 ?p1 - 7.40 ?p2 2.40 2.60 q 5.60 6.00 s 6.15bsc t 9.80 10.20 u 6.00 6.40 mechanical mounting method maximum torque / pressure specification screw through hole in package tab 1 newton meter (nm) or 8.8 inch-pounds (lb-in) clamp against package body 12.3 kilogra m-force per square centimeter (kgf/cm 2 ) or 175 lbf/in 2 soldering time and temperature: this product has been designed for use with high- temperature, lead-free solder. the compone nt leads can be subjected to a maximum temperature of 300 c, for up to 10 seconds. see application note an-303, for more details.
www.powerint.com rev 1.1 01/11 LQA60A300C 6 ordering information part number package packing LQA60A300C to-247 30 units/tube the information contained in this document is subject to change without notice.
rev 1.1 01/11 www.powerint.com LQA60A300C 7 revision notes date 1.0 released by qspeed 08/09 1.1 converted to power in tegrations document 01/11
www.powerint.com rev 1.1 01/11 LQA60A300C 8 for the latest updates , visit our website: www.powerint.com power integrations reserves the right to make changes to its products at any time to improve reliability or manufacturability. power integrations does not assume any liability arising fr om the use of any device or circuit described herein. power integrations makes no warranty herein and spec ifically disclaims all warranties including, without limitation, the implied warranties of merchantability, fitness for a particular purpose, and non-infringement of third party rights. patent information the products and applications illustrated herein (including transformer construction and circuits external to the products) may be covered by one or more u.s. and foreign patents, or potentially by pending u.s. and foreign patent applications assigned to power integrations. a complete list of power integrations? patents may be found at www.powerint.com . power integrations grants its customers a license under certain patent rights as set forth at http://www.powerint.com/ip.htm. the pi logo, topswitch, tinyswitch, linkswitch, dpa-switch, peakswitch, capzero, senzero, linkzero, hiperpfs, hipertfs, qspeed, ecosmart, clampless, e-shield, filterfuse, stackfet, pi expert and pi facts are trademarks of power integrations, inc. other trademarks are property of their respective companies. ?copyright 2011 power integrations, inc. power integrations worldwide sales support locations world headquarters 5245 hellyer avenue san jose, ca 95138, usa. main: +1-408-414-9200 customer service: phone: +1-408-414-9665 fax: +1-408-414-9765 e-mail: usasales@powerint.com germany rueckertstrasse 3 d-80336, munich germany phone: +49-89-5527-3911 fax: +49-89-5527-3920 e-mail: eurosales@powerint.com japan kosei dai-3 building 2-12-11, shin-yokohama, kohoku-ku, yokohama-shi, kanagawa 222-0033 japan phone: +81-45-471-1021 fax: +81-45-471-3717 e-mail: japansales@powerint.com taiwan 5f, no. 318, nei hu rd., sec. 1 nei hu district taipei 114, taiwan r.o.c. phone: +886-2-2659-4570 fax: +886-2-2659-4550 e-mail: taiwansales@powerint.com china (shanghai) rm 1601/1610, tower 1 kerry everbright city no. 218 tianmu road west shanghai, p.r.c. 200070 phone: +86-021-6354-6323 fax: +86-021-6354-6325 e-mail : chinasales@powerint.com india #1, 14 th main road vasanthanagar bangalore-560052 india phone: +91-80-4113-8020 fax: +91-80-4113-8023 e-mail: indiasales@powerint.com korea rm 602, 6fl korea city air terminal b/d, 159-6 samsung-dong, kangnam-gu, seoul, 135-728 korea phone: +82-2-2016-6610 fax: +82-2-2016-6630 e-mail: koreasales@powerint.com europe hq 1st floor, st. james?s house east street, farnham surrey gu9 7tj united kingdom phone: +44 (0) 1252-730-141 fax: +44 (0) 1252-727-689 e-mail: eurosales@powerint.com china (shenzhen) rm a, b & c 4 th floor, block c, electronics science and technology building 2070 shennan zhong road shenzhen, guangdong, p.r.c. 518031 phone: +86-755-8379-3243 fax: +86-755-8379-5828 e-mail: chinasales@powerint.com italy via de amicis 2 20091 bresso mi italy phone: +39-028-928-6000 fax: +39-028-928-6009 e-mail: eurosales@powerint.com singapore 51 newton road, #19-01/05 goldhill plaza singapore, 308900 phone: +65-6358-2160 fax: +65-6358-2015 e-mail: singaporesales@powerint.com applications hotline world wide +1-408-414-9660 applications fax world wide +1-408-414-9760
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